Ranjan SINGH

Appointment: Professor

Research topics:

Development of terahertz, infrared, and optical metamaterial based active and passive plasmonic devices.

ASTAR_M4070314_BRENIAC

NRF-CRP23-2019-0005

QUANTUMET_ANR_NRF

T2EP50121-0017 (MOE Tier 2)

THz metamaterials

Tier 1 RG191/17

Tier 1 RG96/19

Tier-2, MOE2017-T2-1-110

TRIM_M22L1b0110

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1,181 to 1,190 of 1,246 Results

Fig_1B.tab Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices Tabular Data - 140.9 KB - 11 Variables, 1050 Observations - UNF:6:nW9zbt0g9hEjvBU8yTLIkA== Fig_1b: Transient photoconductivity of the photoexcited PbI2 sample for varying pump ﬂuences.
Fig_2B_Inset.tab Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices Tabular Data - 50.9 KB - 4 Variables, 1002 Observations - UNF:6:sdZz3gJFF6XRzsJweC/f2w== Fig 2b_Inset: Ultrafast relaxation dynamics of PbI2
Fig_2B.tab Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices Tabular Data - 111.2 KB - 8 Variables, 713 Observations - UNF:6:oJ/gdwOjmWZBvzXfAh5WmQ== Fig 2b: THz transmission spectra of the PbI2-TASR-1 and PbI2-TASR-2 samples spin coated with the 160 nm thin PbI2 ﬁlms, measured at various pump probe delay (tp) for the pump ﬂuence of 400 µJ cm−2.
Fig_2C.tab Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices Tabular Data - 97.2 KB - 7 Variables, 713 Observations - UNF:6:2YZM2CGXORAAQvbutk4eUg== Fig_2c: Hz transmission spectra of the PbI2-TASR-1 and PbI2-TASR-2 samples spin coated with the 500 nm thin PbI2 ﬁlms, measured at various pump probe delay (tp) for the pump ﬂuence of 900 µJ cm−2.
Fig_2E.tab Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices Tabular Data - 24.9 KB - 5 Variables, 1000 Observations - UNF:6:WxaOtp8IhXyK/F80pqcCBQ== Fig_2e: Exponential decay in the strength of conﬁned THz ﬁelds with respect to change in the conductivity of the spin-coated PbI2 thin ﬁlm
Fig_3A.tab Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices Tabular Data - 124.9 KB - 9 Variables, 713 Observations - UNF:6:ejF2mHiHZhqDNWK3BT20Hw== Fig_3a: Experimentally measured THz transmission spectra of the PbI2-TASR-1, spin coated with dPbI2 = 160nm thick PbI2 ﬁlms showing the amplitude modulation for varying ﬂuences of incident pump photon of energy 3.1 eV.
Fig_3B.tab Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices Tabular Data - 111.8 KB - 8 Variables, 713 Observations - UNF:6:yItN1cX8Ouq+bJ7iMjdzdA== Fig_3b: Experimentally measured THz transmission spectra of the PbI2-TASR-2, spin coated with dPbI2 = 500nm thick PbI2 ﬁlms showing the amplitude modulation for varying ﬂuences of incident pump photon of energy 3.1 eV.
Fig_3C.tab Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices Tabular Data - 113.1 KB - 8 Variables, 713 Observations - UNF:6:9fQ0UTKeqt0IWg5PHPXKfg== Fig_3c: Experimentally measured THz transmission spectra of the PbI2-TASR-3, spin coated with dPbI2 = 2.5um thick PbI2 ﬁlms showing the amplitude modulation for varying ﬂuences of incident pump photon of energy 3.1 eV.
Fig_3D.tab Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices Tabular Data - 88.4 KB - 10 Variables, 1002 Observations - UNF:6:DUrOor/D5LZGtkZz9Da7NQ== Fig 3(d): The corresponding amplitude modulation depths of Fano and the dipole resonances showing the maximum absolute modulation depth of MFano = 1 at Φ = 400 µJ cm−2 for PbI2-TASR-1.
Fig_3E.tab Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices Tabular Data - 94.2 KB - 10 Variables, 1002 Observations - UNF:6:Q0FXvnMM2J1Eii557Af4AA== Fig. 3(e): The corresponding amplitude modulation depths of Fano and the dipole resonances showing the maximum absolute modulation depth of MFano = 1 at Φ = 900 µJ cm−2 for PbI2-TASR-2.

Fig_1B.tab

Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices

Tabular Data - 140.9 KB - 11 Variables, 1050 Observations -

Fig_1b: Transient photoconductivity of the photoexcited PbI2 sample for varying pump ﬂuences.

Fig_2B_Inset.tab

Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices

Tabular Data - 50.9 KB - 4 Variables, 1002 Observations -

Fig 2b_Inset: Ultrafast relaxation dynamics of PbI2

Fig_2B.tab

Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices

Tabular Data - 111.2 KB - 8 Variables, 713 Observations -

Fig 2b: THz transmission spectra of the PbI2-TASR-1 and PbI2-TASR-2 samples spin coated with the 160 nm thin PbI2 ﬁlms, measured at various pump probe delay (tp) for the pump ﬂuence of 400 µJ cm−2.

Fig_2C.tab

Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices

Tabular Data - 97.2 KB - 7 Variables, 713 Observations -

Fig_2c: Hz transmission spectra of the PbI2-TASR-1 and PbI2-TASR-2 samples spin coated with the 500 nm thin PbI2 ﬁlms, measured at various pump probe delay (tp) for the pump ﬂuence of 900 µJ cm−2.

Fig_2E.tab

Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices

Tabular Data - 24.9 KB - 5 Variables, 1000 Observations -

Fig_2e: Exponential decay in the strength of conﬁned THz ﬁelds with respect to change in the conductivity of the spin-coated PbI2 thin ﬁlm

Fig_3A.tab

Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices

Tabular Data - 124.9 KB - 9 Variables, 713 Observations -

Fig_3a: Experimentally measured THz transmission spectra of the PbI2-TASR-1, spin coated with dPbI2 = 160nm thick PbI2 ﬁlms showing the amplitude modulation for varying ﬂuences of incident pump photon of energy 3.1 eV.

Fig_3B.tab

Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices

Tabular Data - 111.8 KB - 8 Variables, 713 Observations -

Fig_3b: Experimentally measured THz transmission spectra of the PbI2-TASR-2, spin coated with dPbI2 = 500nm thick PbI2 ﬁlms showing the amplitude modulation for varying ﬂuences of incident pump photon of energy 3.1 eV.

Fig_3C.tab

Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices

Tabular Data - 113.1 KB - 8 Variables, 713 Observations -

Fig_3c: Experimentally measured THz transmission spectra of the PbI2-TASR-3, spin coated with dPbI2 = 2.5um thick PbI2 ﬁlms showing the amplitude modulation for varying ﬂuences of incident pump photon of energy 3.1 eV.

Fig_3D.tab

Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices

Tabular Data - 88.4 KB - 10 Variables, 1002 Observations -

Fig 3(d): The corresponding amplitude modulation depths of Fano and the dipole resonances showing the maximum absolute modulation depth of MFano = 1 at Φ = 400 µJ cm−2 for PbI2-TASR-1.

Fig_3E.tab

Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices

Tabular Data - 94.2 KB - 10 Variables, 1002 Observations -

Fig. 3(e): The corresponding amplitude modulation depths of Fano and the dipole resonances showing the maximum absolute modulation depth of MFano = 1 at Φ = 900 µJ cm−2 for PbI2-TASR-2.

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