Tier 1 RG191/17

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111 to 114 of 114 Results

Fig_4A_Inset.tab Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices Tabular Data - 670 B - 7 Variables, 9 Observations - UNF:6:cX2WTKeBAQUwLrkDZ1OJ7g== Fig 4(a) Inset: The inset shows the peak value of the differential transmission of THz through PbI2-TF samples of PbI2 thickness dPbI2 = 160, 500, and 2500 nm for varying pump ﬂuences.
Fig_4A.tab Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices Tabular Data - 42.2 KB - 5 Variables, 602 Observations - UNF:6:Httnc2kw6SYDz3o9mJ7aaw== Fig 4(a): Transient differential (−\|ΔE\|) THz transmission through the photoexcited different thicknesses of PbI2 in pristine thin ﬁlm (PbI2-TF).
Fig_4B_Inset.tab Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices Tabular Data - 738 B - 7 Variables, 9 Observations - UNF:6:yxZJJJx+wK4YZzfcbg5TTg== Fig 4(b) Inset: The inset shows the peak value of the differential transmission of THz through PbI2-TASR samples of PbI2 thickness dPbI2 = 160, 500, and 2500 nm for varying pump ﬂuences.
Fig_4B.tab Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices Tabular Data - 131.2 KB - 8 Variables, 1003 Observations - UNF:6:yMxH4W/a143RI2qkKC2XkQ== Fig. 4(b): Transient differential (−\|ΔE\|) THz transmission through the photoexcited different thicknesses of PbI2 in spin-coated PbI2-TASR samples measured using TRTS measurements.

Fig_4A_Inset.tab

Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices

Tabular Data - 670 B - 7 Variables, 9 Observations -

Fig 4(a) Inset: The inset shows the peak value of the differential transmission of THz through PbI2-TF samples of PbI2 thickness dPbI2 = 160, 500, and 2500 nm for varying pump ﬂuences.

Fig_4A.tab

Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices

Tabular Data - 42.2 KB - 5 Variables, 602 Observations -

Fig 4(a): Transient differential (−|ΔE|) THz transmission through the photoexcited different thicknesses of PbI2 in pristine thin ﬁlm (PbI2-TF).

Fig_4B_Inset.tab

Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices

Tabular Data - 738 B - 7 Variables, 9 Observations -

Fig 4(b) Inset: The inset shows the peak value of the differential transmission of THz through PbI2-TASR samples of PbI2 thickness dPbI2 = 160, 500, and 2500 nm for varying pump ﬂuences.

Fig_4B.tab

Apr 30, 2020 - Replication data: Solution‐Processed Lead Iodide for Ultrafast All‐Optical Switching of Terahertz Photonic Devices

Tabular Data - 131.2 KB - 8 Variables, 1003 Observations -

Fig. 4(b): Transient differential (−|ΔE|) THz transmission through the photoexcited different thicknesses of PbI2 in spin-coated PbI2-TASR samples measured using TRTS measurements.

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