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Part 1: Document Description
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Citation |
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Title: |
Related data for: Indium Tungsten Oxide Thin Films for Flexible High-Performance Transistors and Neuromorphic Electronics |
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Identification Number: |
doi:10.21979/N9/WCSPEO |
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Distributor: |
DR-NTU (Data) |
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Date of Distribution: |
2020-04-19 |
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Version: |
2 |
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Bibliographic Citation: |
Tiwari, Nidhi; Rajput, Mayank; John, Rohit Abraham; Nguyen, Anh Chien; Mathews, Nripan, 2020, "Related data for: Indium Tungsten Oxide Thin Films for Flexible High-Performance Transistors and Neuromorphic Electronics", https://doi.org/10.21979/N9/WCSPEO, DR-NTU (Data), V2 |
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Citation |
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Title: |
Related data for: Indium Tungsten Oxide Thin Films for Flexible High-Performance Transistors and Neuromorphic Electronics |
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Identification Number: |
doi:10.21979/N9/WCSPEO |
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Authoring Entity: |
Tiwari, Nidhi (Nanyang Technological University) |
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Rajput, Mayank (Nanyang Technological University) |
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John, Rohit Abraham (Nanyang Technological University) |
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Nguyen, Anh Chien (Nanyang Technological University) |
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Mathews, Nripan (Nanyang Technological University) |
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Software used in Production: |
Origin |
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Grant Number: |
Tier 1 grant RG166/16 |
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Grant Number: |
Tier 2 grant MOE2016-T2-1-100 |
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Distributor: |
DR-NTU (Data) |
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Access Authority: |
Nidhi Tiwari |
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Access Authority: |
Nripan Mathews |
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Depositor: |
Nidhi Tiwari |
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Date of Deposit: |
2018-11-23 |
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Holdings Information: |
https://doi.org/10.21979/N9/WCSPEO |
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Study Scope |
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Keywords: |
Engineering, Engineering, flexible thin film transistor, indium tungsten oxide, synaptic transistor, thin films, transparent amorphous oxide semiconductor (TAOS) |
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Abstract: |
Thin-film transistors (TFTs) with high electrical performances (mobility > 10 cm2/V s, Vth < 1 V, SS < 1 V/decade, on/off ratio ≈ 106) obtained from the silicon- and oxide-based single-crystalline semiconductor materials require high processing temperature and hence are not suitable for flexible electronics. Amorphous oxide-based transparent electronic devices are attractive to meet emerging technological demands where crystalline oxide-/silicon-based architectures cannot provide a solution. Here, we tackle this problem by using a novel amorphous oxide semiconducting material—namely, indium tungsten oxide (IWO)—as the active channel in flexible TFTs (FTFTs). Post-annealing temperature as low as 270 °C for amorphous IWO thin films deposited by radio frequency sputtering at room temperature could result in smooth morphology (Rrms ≈ 0.42 nm), good adhesion, and high carrier density (n ≈ 7.19 × 1018 cm–3). Excellent TFT characteristics of flexible devices could be achieved with linear field effect mobility μFE ≈ 25.86 cm2/V s, subthreshold swing SS ≈ 0.30 V/decade, threshold voltage Vth ≈ −1.5 V, and on/off ratio Ion/Ioff ≈ 5.6 × 105 at 3 V and stable operation during bending of the FTFT. Additionally, IWO TFTs were implemented as synapses, the building block for neuromorphic computing. Paired-pulse facilitation up to 138% was observed and showed an exponential decay resembling chemical synapses. Utilizing this characteristic, a high-pass dynamic temporal filter was devised providing increased gain from 1.55 to 21 when frequency was raised from 22 to 62 Hz. The high performance and stability of flexible TFTs obtained with IWO films demonstrate their promise for low-voltage electronic applications. |
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Kind of Data: |
measurements from atomic force microsopy (AFM) |
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Kind of Data: |
contact angle measurements Data |
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Kind of Data: |
measurements from X-ray powder diffraction (XRD) |
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Kind of Data: |
ATR spectrum data |
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Kind of Data: |
transmittance data from UV/Vis Spectrophotometer |
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Kind of Data: |
Keithley 4200 semiconductor characterization data |
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Methodology and Processing |
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Sources Statement |
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Data Access |
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Other Study Description Materials |
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Related Publications |
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Citation |
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Identification Number: |
10.1021/acsami.8b06956 |
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Bibliographic Citation: |
Tiwari, N., Rajput, M., John, R. A., Kulkarni, M. R., Nguyen, A. C., & Mathews, N. (2018). Indium Tungsten Oxide Thin Films for Flexible High-Performance Transistors and Neuromorphic Electronics. ACS Applied Materials & Interfaces, 10(36), 30506-30513. |
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Citation |
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Identification Number: |
10356/104476 |
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Bibliographic Citation: |
Tiwari, N., Rajput, M., John, R. A., Kulkarni, M. R., Nguyen, A. C., & Mathews, N. (2018). Indium Tungsten Oxide Thin Films for Flexible High-Performance Transistors and Neuromorphic Electronics. ACS Applied Materials & Interfaces, 10(36), 30506-30513. |
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Label: |
Figure 1.zip |
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Notes: |
application/x-7z-compressed |
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Figure 2.zip |
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application/x-7z-compressed |
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Figure 3.zip |
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application/x-7z-compressed |
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Figure 4.zip |
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application/x-7z-compressed |
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Figure 5.zip |
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application/x-7z-compressed |
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Supporting figures.zip |
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Notes: |
application/x-7z-compressed |