Replication Data for: MoS2 for Ultrafast All‐Optical Switching and Modulation of THz Fano Metaphotonic Devices (doi:10.21979/N9/K3QYIF)

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Replication Data for: MoS2 for Ultrafast All‐Optical Switching and Modulation of THz Fano Metaphotonic Devices

doi:10.21979/N9/K3QYIF

DR-NTU (Data)

2020-05-11

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Srivastava, Yogesh Kumar; Chaturvedi, Apoorva; Manjappa, Manukumara; Kumar, Abhishek; Dayal, Govind; Kloc, Christian; Singh, Ranjan, 2020, "Replication Data for: MoS2 for Ultrafast All‐Optical Switching and Modulation of THz Fano Metaphotonic Devices", https://doi.org/10.21979/N9/K3QYIF, DR-NTU (Data), V1

Replication Data for: MoS2 for Ultrafast All‐Optical Switching and Modulation of THz Fano Metaphotonic Devices

doi:10.21979/N9/K3QYIF

Srivastava, Yogesh Kumar (Nanyang Technological University)

Chaturvedi, Apoorva (Nanyang Technological University)

Manjappa, Manukumara (Nanyang Technological University)

Kumar, Abhishek (Nanyang Technological University)

Dayal, Govind (Nanyang Technological University)

Kloc, Christian (Nanyang Technological University)

Singh, Ranjan (Nanyang Technological University)

Origin Pro

CST

MOE2011‐T3‐1‐005

MOE2015‐T2‐2‐103

DR-NTU (Data)

Srivastava, Yogesh Kumar

Singh, Ranjan

Srivastava, Yogesh Kumar

2020-05-08

https://doi.org/10.21979/N9/K3QYIF

Physics, Physics, transition metal dichalcogenides, Ultrafast switching, MoS2, Fano resonance

In recent years, the stunning performance of transition metal dichalcogenides (TMDCs) has been utilized in the area of field effect transistors, integrated circuits, photodetectors, light generation and harvesting, valleytronics, and van der Waals (vdW) heterostructures. However, the optoelectronic application of TMDCs in realizing efficient, ultrafast metaphotonic devices in the terahertz part of the electromagnetic spectrum has remained unexplored. The most studied member of the TMDC family, i.e., MoS2, shows an ultrafast carrier relaxation after photoexcitation with near‐infrared femtosecond pulse of energy above the bandgap. Here, this study investigates the photoactive properties of MoS2 to demonstrate an ultrasensitive active switching and modulation of the sharp Fano resonances in MoS2‐coated metamaterials consisting of asymmetric split ring resonator arrays. The results show that all‐optical switching and modulation of micrometer scale subwavelength Fano resonators can be achieved on a timescale of hundred picoseconds at moderate excitation pump fluences. The precise and active control of the MoS2‐based hybrid metaphotonic devices open up opportunities for the real‐world technologies and realization of ultrafast switchable sensors, modulators, filters, and nonlinear devices.

Research data

10.1002/adom.201700762

Srivastava, Y. K., Chaturvedi, A., Manjappa, M., Kumar, A., Dayal, G., Kloc, C., & Singh, R. (2017). MoS2 for ultrafast all-optical switching and modulation of THz fano metaphotonic devices. Advanced Optical Materials, 5(23), 1700762-.

10356/138361

Srivastava, Y. K., Chaturvedi, A., Manjappa, M., Kumar, A., Dayal, G., Kloc, C., & Singh, R. (2017). MoS2 for ultrafast all-optical switching and modulation of THz fano metaphotonic devices. Advanced Optical Materials, 5(23), 1700762-.

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2b.jpg

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3D atomic force microscopy (AFM) image of the drop-casted MoS2 on the quartz substrate.

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2c.jpg

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2D atomic force microscopy (AFM) image of the drop-casted MoS2 on the quartz substrate.

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Figure 2a.opj

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Measured X-ray diffraction (XRD) spectra of the drop-casted MoS2 over a quartz substrate. Corresponding simulated XRD pattern of MoS2 from the literature (ICSD-95569).

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Figure 3 a-f.opj

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Experimentally measured terahertz transmission spectra of the fabricated metaphotonic device a) without MoS2 b–f) with drop-casted MoS2, layer at different optical pump fluences (0 (b), 2.6 (c), 12.7 (d), 127 (e) and 254 (f) µJ cm−2

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Figure 4.opj

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Extracted photo-conductivity and corresponding Drude smith fitting

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Figure 5a.opj

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Numerically simulated amplitude transmission spectra by changing the photoconductivity of drop-casted MoS2 layer deposited on the TASR metamaterial structure.

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Figure 5 b E_Field_withoutMoS2.bmp

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Numerically calculated E-field distributions in the TASR metamaterial structure at the Fano resonance frequency for TASR without MoS2

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Figure 5 c Efield_150_Sm_with MOS2.bmp

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Numerically calculated E-field distributions in the TASR metamaterial structure at the Fano resonance frequency for TASR with MoS2, without optical pump.

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Figure 5 d E field 250_62.7 microJcm-2.bmp

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Numerically calculated E-field distributions in the TASR metamaterial structure at the Fano resonance frequency for TASR with optically pumped MoS2 with low pump fluence (63.5 µJ cm−2).

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Figure 5 e E_field_400Sm_ 254 microJcm-2.bmp

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Numerically calculated E-field distributions in the TASR metamaterial structure at the Fano resonance frequency for TASR with optically pumped MoS2 with high pump fluence (254 µJ cm−2).

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Figure 6a b c.opj

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Experimentally measured photo-carrier relaxation dynamics and corresponding biexponential fitting of the drop-casted MoS2 film on a quartz substrate performed using the OPTP measurements at excitation pump fluence a) 63.5 µJ cm−2 b) 127 µJ cm−2 c) 254 µJ cm−2

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Raw data_Figure 6a_Fitting 50 mW -62.7 microJcm-2.opj

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Carrier carrier dynamics and corresponding bi-exponential fitting at 63.5 microJ/cm-2

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Raw data_Figure 6b_ Fitting 100 mW-127 microJcm-2.opj

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Carrier carrier dynamics and corresponding bi-exponential fitting at 127 microJ/cm-2

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Raw data_Figure 6c Fitting 200 mW_254 microJcm-2.opj

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Carrier carrier dynamics and corresponding bi-exponential fitting at 254 microJ/cm-2

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Read Me.txt

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