C‐Plasma of Hierarchical Graphene Survives SnS Bundles for Ultrastable and High Volumetric Na‐Ion Storage (doi:10.21979/N9/RKXPEQ)

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Document Description

Citation

Title:

C‐Plasma of Hierarchical Graphene Survives SnS Bundles for Ultrastable and High Volumetric Na‐Ion Storage

Identification Number:

doi:10.21979/N9/RKXPEQ

Distributor:

DR-NTU (Data)

Date of Distribution:

2022-06-11

Version:

1

Bibliographic Citation:

Chao, Dongliang, 2022, "C‐Plasma of Hierarchical Graphene Survives SnS Bundles for Ultrastable and High Volumetric Na‐Ion Storage", https://doi.org/10.21979/N9/RKXPEQ, DR-NTU (Data), V1

Study Description

Citation

Title:

C‐Plasma of Hierarchical Graphene Survives SnS Bundles for Ultrastable and High Volumetric Na‐Ion Storage

Identification Number:

doi:10.21979/N9/RKXPEQ

Authoring Entity:

Chao, Dongliang (Nanyang Technological University)

Software used in Production:

Origin

Grant Number:

Tier 2 grant (MOE 2017-T2-1-073

Grant Number:

AcRF Tier 1 grant (RG12/17)

Grant Number:

AcRF grant RI 4/16 RSR

Distributor:

DR-NTU (Data)

Access Authority:

Fan, Hongjin

Depositor:

Chao, Dongliang

Date of Deposit:

2020-04-24

Holdings Information:

https://doi.org/10.21979/N9/RKXPEQ

Study Scope

Keywords:

Chemistry, Chemistry, C‐Plasma

Abstract:

Here, an elegant and versatile strategy is developed to significantly extend the lifespan and rate capability of tin sulfide nanobelt electrodes while maintaining high areal and volumetric capacities. In this strategy, in situ bundles of robust hierarchical graphene (hG) are grown uniformly on tin sulfide nanobelt networks through a rapid (5 min) carbon‐plasma method with sustainable oil as the carbon source and the partially reduced Sn as the catalyst. The nucleation of graphene, CN (with size N ranging from 1 to 24), on the Sn(111) surface is systematically explored using density functional theory calculations. It is demonstrated that this chemical‐bonded hG strategy is powerful in enhancing overall electrochemical performance.

Kind of Data:

Processed and raw data

Methodology and Processing

Sources Statement

Data Access

Other Study Description Materials

Related Publications

Citation

Identification Number:

10.1002/adma.201804833

Bibliographic Citation:

Chao, D., Ouyang, B., Liang, P., Huong, T. T. T., Jia, G., Huang, H., ... Fan, H. J. (2018). C-plasma of hierarchical graphene survives SnS bundles for ultrastable and high volumetric Na-ion storage. Advanced Materials, 30(49), 1804833-.

Citation

Identification Number:

10356/92836

Bibliographic Citation:

Chao, D., Ouyang, B., Liang, P., Huong, T. T. T., Jia, G., Huang, H., ... Fan, H. J. (2018). C-plasma of hierarchical graphene survives SnS bundles for ultrastable and high volumetric Na-ion storage. Advanced Materials, 30(49), 1804833-.

Other Study-Related Materials

Label:

Adv. Mater. 6-2018-1804833.rar

Notes:

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