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Part 1: Document Description
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Citation |
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Title: |
Understanding Charge-Trapping Evolution In Small-Dimension Logic/Memory Devices (MOE2016-T2-2-102) |
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Identification Number: |
doi:10.21979/N9/GP2AUB |
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Distributor: |
DR-NTU (Data) |
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Date of Distribution: |
2022-05-20 |
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Version: |
1 |
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Bibliographic Citation: |
Ang, Diing Shenp, 2022, "Understanding Charge-Trapping Evolution In Small-Dimension Logic/Memory Devices (MOE2016-T2-2-102)", https://doi.org/10.21979/N9/GP2AUB, DR-NTU (Data), V1 |
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Citation |
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Title: |
Understanding Charge-Trapping Evolution In Small-Dimension Logic/Memory Devices (MOE2016-T2-2-102) |
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Identification Number: |
doi:10.21979/N9/GP2AUB |
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Authoring Entity: |
Ang, Diing Shenp (Nanyang Technological University) |
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Software used in Production: |
Origin |
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Grant Number: |
MOE2016-T2-2-102 |
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Distributor: |
DR-NTU (Data) |
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Access Authority: |
Ang, Diing Shenp |
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Depositor: |
Ang, Diing Shenp |
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Date of Deposit: |
2022-05-20 |
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Holdings Information: |
https://doi.org/10.21979/N9/GP2AUB |
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Study Scope |
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Keywords: |
Engineering, Engineering, metal-oxide-semiconductor field-effect transistor, gate dielectric traps, channel hot-carrier effect, bias-temperature instability |
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Abstract: |
Measurement data compilation for the project. |
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Kind of Data: |
Measurement data |
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Methodology and Processing |
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Sources Statement |
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Data Access |
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Notes: |
Please contact the PI to request for access. |
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Other Study Description Materials |
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Label: |
Data(1).pptx |
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Notes: |
application/vnd.openxmlformats-officedocument.presentationml.presentation |
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Label: |
Data(2).pptx |
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Notes: |
application/vnd.openxmlformats-officedocument.presentationml.presentation |