Replication Data for: Field‐Driven Athermal Activation of Amorphous Metal Oxide Semiconductors for Flexible Programmable Logic Circuits and Neuromorphic Electronics (doi:10.21979/N9/DWYGO3)

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Part 1: Document Description
Part 2: Study Description
Part 3: Data Files Description
Part 4: Variable Description
Part 5: Other Study-Related Materials
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Document Description

Citation

Title:

Replication Data for: Field‐Driven Athermal Activation of Amorphous Metal Oxide Semiconductors for Flexible Programmable Logic Circuits and Neuromorphic Electronics

Identification Number:

doi:10.21979/N9/DWYGO3

Distributor:

DR-NTU (Data)

Date of Distribution:

2020-04-23

Version:

1

Bibliographic Citation:

Kulkarni, Mohit Rameshchandra, 2020, "Replication Data for: Field‐Driven Athermal Activation of Amorphous Metal Oxide Semiconductors for Flexible Programmable Logic Circuits and Neuromorphic Electronics", https://doi.org/10.21979/N9/DWYGO3, DR-NTU (Data), V1, UNF:6:mma0mF/haZQCCJPLhPdRMw== [fileUNF]

Study Description

Citation

Title:

Replication Data for: Field‐Driven Athermal Activation of Amorphous Metal Oxide Semiconductors for Flexible Programmable Logic Circuits and Neuromorphic Electronics

Identification Number:

doi:10.21979/N9/DWYGO3

Authoring Entity:

Kulkarni, Mohit Rameshchandra (Nanyang Technological University)

Software used in Production:

Keithley

Grant Number:

MOE Tier 1 Grants RG 166/16

Grant Number:

MOE Tier 2 Grant MOE2016-T2-1-100

Distributor:

DR-NTU (Data)

Access Authority:

Kulkarni, Mohit Rameshchandra

Depositor:

Kulkarni, Mohit

Date of Deposit:

2020-04-23

Holdings Information:

https://doi.org/10.21979/N9/DWYGO3

Study Scope

Keywords:

Engineering, Engineering, Amorphous metal oxides, field‐driven athermal activation, neuromorphic electronics, programmable logic circuits

Abstract:

Dataset for figures in "Field‐Driven Athermal Activation of Amorphous Metal Oxide Semiconductors for Flexible Programmable Logic Circuits and Neuromorphic Electronics"

Kind of Data:

Keithley 4200 semiconductor characterization data

Kind of Data:

measurements from atomic force microsopy (AFM)

Kind of Data:

measurements from X-ray powder diffraction (XRD)

Methodology and Processing

Sources Statement

Data Access

Other Study Description Materials

Related Publications

Citation

Identification Number:

10.1002/smll.201901457

Bibliographic Citation:

Kulkarni, M. R., John, R. A., Tiwari, N., Nirmal, A., Ng, S. E., Nguyen, A. C., & Mathews, N. (2019). Field‐Driven Athermal Activation of Amorphous Metal Oxide Semiconductors for Flexible Programmable Logic Circuits and Neuromorphic Electronics. Small, 15(27), 1901457.

Citation

Identification Number:

10356/138083

Bibliographic Citation:

Kulkarni, M. R., John, R. A., Tiwari, N., Nirmal, A., Ng, S. E., Nguyen, A. C., & Mathews, N. (2019). Field‐Driven Athermal Activation of Amorphous Metal Oxide Semiconductors for Flexible Programmable Logic Circuits and Neuromorphic Electronics. Small, 15(27), 1901457.

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