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Part 1: Document Description
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Citation |
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Title: |
Replication Data for: High Mobility 3D Dirac Semimetal (Cd3As2) for Ultrafast Photoactive Terahertz Photonics |
Identification Number: |
doi:10.21979/N9/G5GIEN |
Distributor: |
DR-NTU (Data) |
Date of Distribution: |
2021-07-21 |
Version: |
1 |
Bibliographic Citation: |
Dai, Zijie; Manjappa, Manukumara; Yang, Yunkun; Tan, Thomas Cai Wei; Qiang, Bo; Han, Song; Wong, Liang Jie; Xiu, Faxian; Liu, Weiwei; Singh, Ranjan, 2021, "Replication Data for: High Mobility 3D Dirac Semimetal (Cd3As2) for Ultrafast Photoactive Terahertz Photonics", https://doi.org/10.21979/N9/G5GIEN, DR-NTU (Data), V1 |
Citation |
|
Title: |
Replication Data for: High Mobility 3D Dirac Semimetal (Cd3As2) for Ultrafast Photoactive Terahertz Photonics |
Identification Number: |
doi:10.21979/N9/G5GIEN |
Authoring Entity: |
Dai, Zijie (Nanyang Technological University) |
Manjappa, Manukumara (Nanyang Technological University) |
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Yang, Yunkun (Fudan University, Shanghai, 200433 China) |
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Tan, Thomas Cai Wei (Nanyang Technological University) |
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Qiang, Bo (Nanyang Technological University) |
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Han, Song (Nanyang Technological University) |
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Wong, Liang Jie (Nanyang Technological University) |
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Xiu, Faxian (Fudan University, Shanghai, 200433 China) |
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Liu, Weiwei (Nankai University, Tianjin, 300350 China) |
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Singh, Ranjan (Nanyang Technological University) |
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Software used in Production: |
CST Microwave studio |
Software used in Production: |
MatLab |
Grant Number: |
MOE2016-T3-1-006 |
Grant Number: |
RG96/19 |
Grant Number: |
Science & Engineering Research Council A1984c0043 |
Grant Number: |
Nanyang Assistant Professorship Start-up Grant |
Distributor: |
DR-NTU (Data) |
Access Authority: |
Singh, Ranjan |
Depositor: |
Manjappa, Manukumara |
Date of Deposit: |
2021-07-21 |
Holdings Information: |
https://doi.org/10.21979/N9/G5GIEN |
Study Scope |
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Keywords: |
Physics, Physics, 3D Dirac semimetal Cd3As2, ultrafast tunable conductivity, terahertz photonics, high mobility |
Abstract: |
The Dirac semimetal cadmium arsenide (Cd3As2), a 3D electronic analog of graphene, has sparked renewed research interests for its novel topological phases and excellent optoelectronic properties. The gapless nature of its 3D electronic band facilitates strong optical nonlinearity and supports Dirac plasmons that are of particular interest to realize high-performance electronic and photonic devices at terahertz (1 THz = 4.1 meV) frequencies, where the performance of most dynamic materials are limited by the tradeoff between power-efficiency and switching speed. Here, all-optical, low-power, ultrafast broadband modulation of terahertz waves using an ultrathin film (100 nm, λ/3000) of Cd3As2 are experimentally demonstrated through active tailoring of the photoconductivity. The measurements reveal the photosensitive metallic behavior of Cd3As2 with high terahertz electron mobility of 7200 cm2 (Vs)−1. In addition, optical fluence dependent ultrafast charge carrier relaxation (15.5 ps), terahertz mobility, and long momentum scattering time (157 fs) comparable to superconductors that invoke kinetic inductance at terahertz frequencies are demonstrated. These remarkable properties of 3D Dirac topological semimetal envision a new class of power-efficient, high speed, compact, tunable electronic, and photonic devices. |
Kind of Data: |
Research Data |
Methodology and Processing |
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Sources Statement |
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Data Access |
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Other Study Description Materials |
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Related Publications |
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Citation |
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Identification Number: |
10.1002/adfm.202011011 |
Bibliographic Citation: |
Dai, Z., Manjappa, M., Yang, Y., Tan, T. C. W., Qiang, B., Han, S., ... & Singh, R. (2021). High Mobility 3D Dirac Semimetal (Cd3As2) for Ultrafast Photoactive Terahertz Photonics. Advanced Functional Materials, 31(17), 2011011. |
Label: |
Fig.1.opj |
Text: |
Characterization of pump fluence dependent terahertz constants of Cd3As2 thin film. a) Real and b) imaginary part of complex permittivity. c) Real and d) imaginary part of the complex conductivity. Spheres are the experimental data and solid lines are fitting results for the Drude–Smith model. |
Notes: |
application/octet-stream |
Label: |
Fig.2.opj |
Text: |
a) Measured momentum scattering time (τs) of Cd3As2 sample for varying pump fluences, inset: Smith's coefficient C. b) Measured carrier mobility versus pump fluence, inset: mobility after Drude–Smith correction. The error bars of the data points are the standard error of the mean extracted from Drude–Smith fitting. The solid lines are the guide to the eye. |
Notes: |
application/octet-stream |
Label: |
Fig.3.opj |
Text: |
a) Transmitted terahertz time-domain signals of Cd3As2 thin film under varying pump fluences from 2.54 to 635 µJ cm−2, inset: schematic diagram of the terahertz modulator based on Cd3As2 thin film as well as the optical-pump terahertz-probe spectroscopy (OPTP) geometry. b) The experimental transmission spectra (spheres) and the corresponding simulated transmission spectra (solid lines) obtained using the frequency dependent complex permittivity that show very good agreement with eachother. c) The modulation depth (MD) at 1.0 THz versus pump fluences, Region I: F < 63.5 µJ cm−2 with the MD increasing exponentially (inset), Region II: F > 63.5 µJ cm−2 with the MD gradually saturates. d) Photocarrier relaxation dynamics in Cd3As2 under low pump fluence, open circles are experimental data and solid lines correspond to the mono-exponential fitting to determine the relaxation time constant τ. |
Notes: |
application/octet-stream |
Label: |
Fig.4.opj |
Text: |
Numerically simulated transmission spectra: c) Cd3As2 grating showing a broad dipolar resonance. (d) TASR metamaterial resonators possessing the Fano and dipole coupled resonance modes. Solid lines and dashed curves are simulated spectra based on a dc conductivity model and experimentally derived frequency dependent complex permittivity data, respectively. Inset plots show the respective frequency shift of the optically modulated dipole resonance of grating and TASR resonator obtained using measured frequency dependent permittivity data corresponding to the conductivity values of 1.5 × 105 and 3 × 105 S m−1. |
Notes: |
application/octet-stream |