Replication Data for: Terahertz sensing of 7 nm dielectric film with bound states in the continuum metasurfaces (doi:10.21979/N9/45EWUQ)

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Document Description

Citation

Title:

Replication Data for: Terahertz sensing of 7 nm dielectric film with bound states in the continuum metasurfaces

Identification Number:

doi:10.21979/N9/45EWUQ

Distributor:

DR-NTU (Data)

Date of Distribution:

2020-05-14

Version:

1

Bibliographic Citation:

Srivastava, Yogesh Kumar; Ako, Rajour Tanyi; Gupta, Manoj; Bhaskaran, Madhu; Sriram, Sharath; Singh, Ranjan, 2020, "Replication Data for: Terahertz sensing of 7 nm dielectric film with bound states in the continuum metasurfaces", https://doi.org/10.21979/N9/45EWUQ, DR-NTU (Data), V1

Study Description

Citation

Title:

Replication Data for: Terahertz sensing of 7 nm dielectric film with bound states in the continuum metasurfaces

Identification Number:

doi:10.21979/N9/45EWUQ

Authoring Entity:

Srivastava, Yogesh Kumar (Nanyang Technological University)

Ako, Rajour Tanyi (RMIT University, Melbourne, VIC 3000, Australia)

Gupta, Manoj (Nanyang Technological University)

Bhaskaran, Madhu (RMIT University, Melbourne, VIC 3000, Australia)

Sriram, Sharath (RMIT University, Melbourne, VIC 3000, Australia)

Singh, Ranjan (Nanyang Technological University)

Software used in Production:

CST

Software used in Production:

Origin Pro

Grant Number:

Tier 1 RG191/17

Grant Number:

Tier 2 MOE2017-T2-1-110

Distributor:

DR-NTU (Data)

Access Authority:

Srivastava, Yogesh Kumar

Access Authority:

Singh, Ranjan

Depositor:

Srivastava, Yogesh Kumar

Date of Deposit:

2020-05-11

Holdings Information:

https://doi.org/10.21979/N9/45EWUQ

Study Scope

Keywords:

Physics, Physics, Bound State in the Continumm, Sensing, Fano resonance

Abstract:

The fingerprint spectral response of several materials with terahertz electromagnetic radiation indicates that terahertz technology is an effective tool for sensing applications. However, sensing few nanometer thin-films of dielectrics with much longer terahertz waves (1 THz = 0.3 mm) is challenging. Here, we demonstrate a quasibound state in the continuum (BIC) resonance for sensing of a nanometer scale thin analyte deposited on a flexible metasurface. The large sensitivity originates from the strong local field confinement of the quasi-BIC Fano resonance state and extremely low absorption loss of a low-index cyclic olefin copolymer substrate. A minimum thickness of 7 nm thin-film of germanium is sensed on the metasurface, which corresponds to a deep subwavelength scale of λ/43 000, where λ is the resonance wavelength. The low-loss, flexible, and large mechanical strength of the quasi-BIC microstructured metamaterial sensor could be an ideal platform for developing ultrasensitive wearable terahertz sensors.

Kind of Data:

Research data

Methodology and Processing

Sources Statement

Data Access

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Related Publications

Citation

Identification Number:

10.1063/1.5110383

Bibliographic Citation:

Srivastava, Y. K., Ako, R. T., Gupta, M., Bhaskaran, M., Sriram, S., & Singh, R. (2019). Terahertz sensing of 7 nm dielectric film with bound states in the continuum metasurfaces. Applied Physics Letters, 115(15), 151105-.

Citation

Identification Number:

10356/138451

Bibliographic Citation:

Srivastava, Y. K., Ako, R. T., Gupta, M., Bhaskaran, M., Sriram, S., & Singh, R. (2019). Terahertz sensing of 7 nm dielectric film with bound states in the continuum metasurfaces. Applied Physics Letters, 115(15), 151105-.

Other Study-Related Materials

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Figure 1 C.opj

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Q factors of quasi-BICs of an ideal (PEC) and a realistic (metallic) metamaterial array with varying asymmetry d.

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Figure 1 D.opj

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Change in the simulated transmission amplitude (ΔT) n coating Ge of thicknesses ranging from 7 to 20 nm on the TASR metamateria

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Figure 1 E.opj

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Change in the simulated phase (Δφ degree) on coating Ge of thicknesses ranging from 7 to 20 nm on the TASR metamaterial.

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Figure 2a_Simulation.opj

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Simulated transmission amplitude of the flexible metamaterial without and with the 7 nm Ge coating on the metamaterial.

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Figure 2b_Experiment.opj

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Measured transmission amplitude of the flexible metamaterial without and with the 7 nm Ge coating on the metamaterial.

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Figure 2c_Simulation.opj

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Simulated transmission amplitude of the flexible metamaterial without and with the 20 nm Ge coating on the metamaterial.

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Figure 2d_Experiment.opj

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Measured transmission amplitude of the flexible metamaterial without and with the 20 nm Ge coating on the metamaterial.

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Figure 2e_Simulation.opj

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Simulated transmission amplitude of the flexible metamaterial without and with the 40 nm Ge coating on the metamaterial.

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Figure 2f_Experiment.opj

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Measured transmission amplitude of the flexible metamaterial without and with the 40 nm Ge coating on the metamaterial.

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Figure 3a.opj

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Simulated transmission amplitude difference (ΔT) for the analyte overlayer of thicknesses ranging from 0 to 40 nm.

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Figure 3b.opj

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Simulated transmission phase difference (Δφ, degree) for the analyte overlayer of thicknesses ranging from 0 to 40 nm.

Notes:

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Figure 3c.opj

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Experimentally measured transmission amplitude difference (ΔT) for the analyte overlayer of thicknesses ranging from 0 to 40 nm.

Notes:

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Figure 3d.opj

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Experimentally measured transmission phase difference (Δφ degree) for the analyte overlayer of thicknesses ranging from 0 to 40 nm.

Notes:

application/octet-stream

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Figure 4a_Simulation.opj

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Simulated transmission amplitude difference (ΔT) with an analyte of thickness 40 nm but a different refractive index placed on the TASR metamaterial residing on COC substrates, with respect to the corresponding uncoated metamaterials.

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Figure 4b_Simulation_Kapton.opj

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Simulated transmission amplitude difference (ΔT) with an analyte of thickness 40 nm but a different refractive index placed on the TASR metamaterial residing on Kapton substrates, with respect to the corresponding uncoated metamaterials.

Notes:

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Figure 4c.opj

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Peak-to-peak transmission amplitude difference (ΔT) with a change in the refractive indices of the 40 nm thick analyte placed on the TASR metamaterial residing on COC and Kapton substrates.

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Figure S1_a_graph.jpg

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Experimentally measured thickness of the thermally deposited 7 nm Ge thin film using Atomic Force Microscopy (AFM).

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Figure S1_a_picture.tif

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Experimentally measured thickness of the thermally deposited 7 nm Ge thin film using Atomic Force Microscopy (AFM).

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Figure S1_b.png

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Experimentally measured thickness of the thermally deposited 20 nm Ge thin film using Atomic Force Microscopy (AFM).

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Figure S2.opj

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Peak-to-peak phase difference (|Δϕ) with change in refractive indices of the 40 nm thick analyte placed on TASR metamaterial residing on COC and Kapton substrates.

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Figure S3.opj

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a) Simulated transmission amplitude spectra of TASR metamaterial coated with 40 nm thick analyte of different refractive indices on the metamaterial sample residing on COC substrate. b) Simulated transmission amplitude spectra of TASR metamaterial coated with 40 nm thick analyte of different refractive indices on the metamaterial sample residing on Kapton substrate. c) Resonance frequency shift with the change in refractive indices of the 40 nm analyte overlayer deposited on TASR metamaterial residing on COC and silicon substrates.

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Figure S4.jpg

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Electric field distribution

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Inset Figure 1C.opj

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Simulated transmission spectra of the metallic TASR metamaterial with an asymmetry of d = 10 micrometer.

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Inset Figure 4a_Experiment.opj

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The experimentally measured ΔT for 40 nm thick Ge on the TASR metamaterials residing on COC substrate.

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Inset Figure 4b_Experiment.opj

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The experimentally measured ΔT for 40 nm thick Ge on the TASR metamaterials residing on Kapton substrate.

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Read me.txt

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Instructions to read data files

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