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Part 1: Document Description
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Citation |
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Title: |
Replication Data for: Grain Size Modulation and Interfacial Engineering of CH3NH3PbBr3 Emitter Films through Incorporation of Tetraethylammonium Bromide |
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Identification Number: |
doi:10.21979/N9/YSG1OS |
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Distributor: |
DR-NTU (Data) |
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Date of Distribution: |
2020-12-11 |
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Version: |
2 |
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Bibliographic Citation: |
Jamaludin, Nur Fadilah, 2020, "Replication Data for: Grain Size Modulation and Interfacial Engineering of CH3NH3PbBr3 Emitter Films through Incorporation of Tetraethylammonium Bromide", https://doi.org/10.21979/N9/YSG1OS, DR-NTU (Data), V2 |
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Citation |
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Title: |
Replication Data for: Grain Size Modulation and Interfacial Engineering of CH3NH3PbBr3 Emitter Films through Incorporation of Tetraethylammonium Bromide |
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Identification Number: |
doi:10.21979/N9/YSG1OS |
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Authoring Entity: |
Jamaludin, Nur Fadilah (Nanyang Technological University) |
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Software used in Production: |
Origin |
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Grant Number: |
NRF-CRP14-2014-03 |
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Distributor: |
DR-NTU (Data) |
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Access Authority: |
Jamaludin, Nur Fadilah |
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Depositor: |
Jamaludin, Nur Fadilah |
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Date of Deposit: |
2020-12-11 |
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Holdings Information: |
https://doi.org/10.21979/N9/YSG1OS |
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Study Scope |
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Keywords: |
Engineering, Engineering, perovskite, light emitting diodes |
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Abstract: |
Metal halide perovskites have demonstrated breakthrough performances as absorber and emitter materials for photovoltaic and display applications respectively. However, despite the low manufacturing cost associated with solution‐based processing, the propensity for defect formation with this technique has led to an increasing need for defect passivation. Here, we present an inexpensive and facile method to remedy surface defects through a postdeposition treatment process using branched alkylammonium cation species. The simultaneous realignment of interfacial energy levels upon incorporation of tetraethylammonium bromide onto the surface of CH3NH3PbBr3 films contributes favorably toward the enhancement in overall light‐emitting diode characteristics, achieving maximum luminance, current efficiency, and external quantum efficiency values of 11 000 cd m−2, 0.68 cd A−1, and 0.16 %, respectively. |
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Kind of Data: |
Raw data |
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Methodology and Processing |
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Sources Statement |
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Data Access |
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Other Study Description Materials |
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Related Publications |
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Citation |
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Identification Number: |
10.1002/cphc.201701380 |
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Bibliographic Citation: |
Jamaludin, N. F., Yantara, N., Ng, Y. F., Li, M., Goh, T. W., Thirumal, K., ... & Mhaisalkar, S. (2018). Grain Size Modulation and Interfacial Engineering of CH3NH3PbBr3 Emitter Films through Incorporation of Tetraethylammonium Bromide. ChemPhysChem, 19(9), 1075-1080. |
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Citation |
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Identification Number: |
10356/138442 |
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Bibliographic Citation: |
Jamaludin, N. F., Yantara, N., Ng, Y. F., Li, M., Goh, T. W., Thirumal, K., ... & Mhaisalkar, S. (2018). Grain Size Modulation and Interfacial Engineering of CH3NH3PbBr3 Emitter Films through Incorporation of Tetraethylammonium Bromide. ChemPhysChem, 19(9), 1075-1080. |
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Label: |
grain size modulation_submission.pptx |
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Text: |
The raw data is available in the Origin files embedded within the powerpoint |
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Notes: |
application/vnd.openxmlformats-officedocument.presentationml.presentation |
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Label: |
Replication data for Grain Size Modulation and Interfacial Engineering ofCH3NH3PbBr3Emitter Films through Incorporation ofTetraethylammonium Bromide.docx |
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Text: |
Experimental Details |
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Notes: |
application/vnd.openxmlformats-officedocument.wordprocessingml.document |