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Part 1: Document Description
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Citation |
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Title: |
Related Data for: Substrate Engineering for CVD Growth of Single Crystal Graphene |
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Identification Number: |
doi:10.21979/N9/BCB919 |
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Distributor: |
DR-NTU (Data) |
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Date of Distribution: |
2023-11-20 |
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Version: |
1 |
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Bibliographic Citation: |
Huang, Ming; Deng, Bangwei; Dong, Fan; Zhang, Lili; Zhang, Zheye; Chen, Peng, 2023, "Related Data for: Substrate Engineering for CVD Growth of Single Crystal Graphene", https://doi.org/10.21979/N9/BCB919, DR-NTU (Data), V1 |
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Citation |
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Title: |
Related Data for: Substrate Engineering for CVD Growth of Single Crystal Graphene |
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Identification Number: |
doi:10.21979/N9/BCB919 |
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Authoring Entity: |
Huang, Ming (Nanyang Technological University) |
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Deng, Bangwei (University of Electronic Science and Technology of China) |
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Dong, Fan (University of Electronic Science and Technology of China) |
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Zhang, Lili (Agency for Science, Technology and Research (A*STAR)) |
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Zhang, Zheye (Nanyang Technological University) |
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Chen, Peng (Nanyang Technological University) |
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Software used in Production: |
Adobe Illustrator |
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Grant Number: |
AME-IRG grant AMEIRG18-0016 |
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Grant Number: |
AcRF tier 2 grant MOE2017-T2-2-005 |
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Grant Number: |
21822601 |
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Grant Number: |
ZYGX2019Z021 |
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Grant Number: |
B20030 |
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Distributor: |
DR-NTU (Data) |
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Access Authority: |
Huang, Ming |
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Depositor: |
Huang, Ming |
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Date of Deposit: |
2022-01-20 |
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Holdings Information: |
https://doi.org/10.21979/N9/BCB919 |
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Study Scope |
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Keywords: |
Chemistry, Chemistry, chemical vapor deposition, graphene, single crystal, substrate engineering |
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Abstract: |
Single crystal graphene (SCG) has attracted enormous attention for their unique potential to next-generation high-performance optoelectronics. In the absence of grain boundaries, SCG preserves the exceptional intrinsic properties of graphene. Currently, chemical vapor deposition (CVD) has been recognized as an effective method for the large-scale synthesis of graphene film. But polycrystalline films are usually obtained and the present grain boundaries compromise the carrier mobility, thermal conductivity, optical properties, and mechanical properties. The scalable and controllable synthesis of SCG is challenging. Recently, much attention has been attracted on the engineering of large-size single crystal substrates for the epitaxial CVD growth of large-area and high-quality SCG film. In this article, we provide a comprehensive and comparative review on the selection and preparation of various single crystal substrates for CVD growth of SCG under different conditions. The growth mechanisms, current challenges, and future development and perspectives are discussed. |
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Kind of Data: |
survey and summary data |
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Methodology and Processing |
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Sources Statement |
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Data Access |
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Other Study Description Materials |
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Related Publications |
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Citation |
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Identification Number: |
10.1002/smtd.202001213 |
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Bibliographic Citation: |
Huang, M., Deng, B., Dong, F., Zhang, L., Zhang, Z., & Chen, P. (2021). Substrate Engineering for CVD Growth of Single Crystal Graphene. Small Methods, 5(5), 2001213. |
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Citation |
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Identification Number: |
10356/147811 |
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Bibliographic Citation: |
Huang, M., Deng, B., Dong, F., Zhang, L., Zhang, Z. & Chen, P. (2021). Substrate engineering for CVD growth of single crystal graphene. Small Methods, 5(5), 2001213. |
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