Replication Data for: Localized Traps Limited Recombination in Lead Bromide Perovskites (doi:10.21979/N9/OUTTXB)

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Document Description

Citation

Title:

Replication Data for: Localized Traps Limited Recombination in Lead Bromide Perovskites

Identification Number:

doi:10.21979/N9/OUTTXB

Distributor:

DR-NTU (Data)

Date of Distribution:

2019-05-31

Version:

1

Bibliographic Citation:

Fu, Jianhui, 2019, "Replication Data for: Localized Traps Limited Recombination in Lead Bromide Perovskites", https://doi.org/10.21979/N9/OUTTXB, DR-NTU (Data), V1

Study Description

Citation

Title:

Replication Data for: Localized Traps Limited Recombination in Lead Bromide Perovskites

Identification Number:

doi:10.21979/N9/OUTTXB

Authoring Entity:

Fu, Jianhui (Nanyang Technological University)

Software used in Production:

origin

Software used in Production:

OptoAnalyse

Grant Number:

M4082176

Grant Number:

AcRF RG173/16

Grant Number:

AcRF MOE2015‐T2‐2‐015

Grant Number:

AcRF MOE2016‐T2‐1‐034

Grant Number:

AcRF MOE2017‐T2‐2‐002

Grant Number:

ONRGNICOP‐N62909‐17‐1‐2155

Grant Number:

NRF‐CRP14‐2014‐03

Grant Number:

NRF2018‐ITC001‐001

Grant Number:

NRF‐NRFI‐2018‐04

Distributor:

DR-NTU (Data)

Access Authority:

Sum Tze Chien

Depositor:

Fu Jianhui

Date of Deposit:

2019-04-10

Holdings Information:

https://doi.org/10.21979/N9/OUTTXB

Study Scope

Keywords:

Physics, Physics, perovskites, localized trap

Abstract:

Traps exert an omnipotent influence over the performance of halide perovskite optoelectronic devices. A clear understanding of the origin and nature of the traps in halide perovskites is the key to controlling them and realizing optimal devices. Herein, the role of localized traps on the optical properties of lead bromide perovskite films is investigated. In the low-temperature orthorhombic phase of CH3NH3PbBr3 perovskite, band-edge carrier dynamics exhibit a powerlaw decay due to the presence of structural-disorder-induced localized traps, which has a depth of ≈40 meV. The continuous distribution of these localized traps gives rise to a broad sub-band-gap emission that becomes more prominent in thicker films with a larger trap density. The presence of this emission only from the hybrid organic–inorganic perovskites points to the vital role of organic dipoles in localized trap states formation. This study explicates the nature of these localized traps as well as their nontrivial role in carrier recombination kinetics, which is of fundamental importance in perovskites optoelectronics

Kind of Data:

experimental data

Kind of Data:

process-produced data

Methodology and Processing

Sources Statement

Data Access

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Related Publications

Citation

Identification Number:

10.1002/aenm.201803119

Bibliographic Citation:

Fu, J., Jamaludin, N. F., Wu, B., Li, M., Solanki, A., Ng, Y. F., Mhaisalkar, S., Huan, C. H. A.,& Sum, T. C. (2019). Localized Traps Limited Recombination in Lead Bromide Perovskites. Advanced Energy Materials, 9(12), 1803119-.

Citation

Identification Number:

10356/138049

Bibliographic Citation:

Fu, J., Jamaludin, N. F., Wu, B., Li, M., Solanki, A., Ng, Y. F., Mhaisalkar, S., Huan, C. H. A.,& Sum, T. C. (2019). Localized Traps Limited Recombination in Lead Bromide Perovskites. Advanced Energy Materials, 9(12), 1803119-.

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