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Part 1: Document Description
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Citation |
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Title: |
Replication Data for: Non-volatile Organic Transistor Memory based on Black Phosphorus Quantum dots as Charge Trapping Layer |
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Identification Number: |
doi:10.21979/N9/DEL6G7 |
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Distributor: |
DR-NTU (Data) |
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Date of Distribution: |
2020-05-23 |
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Version: |
1 |
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Bibliographic Citation: |
Kumari, Priyanka; Ko, Jieun; Rao, Ramgopal; Mhaisalkar, Subodh; Leong, Wei Lin, 2020, "Replication Data for: Non-volatile Organic Transistor Memory based on Black Phosphorus Quantum dots as Charge Trapping Layer", https://doi.org/10.21979/N9/DEL6G7, DR-NTU (Data), V1, UNF:6:6ybWvdmiqydHgMjI8WbHMQ== [fileUNF] |
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Citation |
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Title: |
Replication Data for: Non-volatile Organic Transistor Memory based on Black Phosphorus Quantum dots as Charge Trapping Layer |
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Identification Number: |
doi:10.21979/N9/DEL6G7 |
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Authoring Entity: |
Kumari, Priyanka (Indian Institute of Technology Bombay) |
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Ko, Jieun (Nanyang Technological University) |
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Rao, Ramgopal (Indian Institute of Technology Bombay) |
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Mhaisalkar, Subodh (Nanyang Technological University) |
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Leong, Wei Lin (Nanyang Technological University) |
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Software used in Production: |
Origin |
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Grant Number: |
Start-up grant (M4081866) |
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Grant Number: |
2016-T1-002-097 |
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Grant Number: |
No.I1801E0030 |
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Grant Number: |
Project No. A1784c019 |
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Grant Number: |
2016-T1-002-097 |
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Distributor: |
DR-NTU (Data) |
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Access Authority: |
Leong, Wei Lin |
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Depositor: |
Leong, Wei Lin |
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Date of Deposit: |
2020-05-23 |
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Holdings Information: |
https://doi.org/10.21979/N9/DEL6G7 |
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Study Scope |
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Keywords: |
Engineering, Engineering, organic memory, Black Phosphorus Quantum dots |
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Abstract: |
This datasets contain the raw data of the publication. |
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Kind of Data: |
Experimental data |
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Methodology and Processing |
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Sources Statement |
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Data Access |
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Other Study Description Materials |
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Related Publications |
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Citation |
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Identification Number: |
10.1109/LED.2020.2991157 |
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Bibliographic Citation: |
Kumari, P., Ko, J., Rao, V. R., Mhaisalkar, S., & Leong, W. L. (2020). Non-volatile organic transistor memory based on black phosphorus quantum dots as charge trapping layer. IEEE Electron Device Letters, 41(6), 852 - 855. |
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Citation |
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Identification Number: |
10356/140331 |
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Bibliographic Citation: |
Kumari, P., Ko, J., Rao, V. R., Mhaisalkar, S., & Leong, W. L. (2020). Non-volatile organic transistor memory based on black phosphorus quantum dots as charge trapping layer. IEEE Electron Device Letters, 41(6), 852 - 855. |
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Notes: |
UNF:6:pTsCDPLOxaJY0IIaJasgFg== |
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File Description--f35795 |
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File: UV-Vis.tab |
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Notes: |
UNF:6:gyUtWYuAy1OfABfc7y1OIA== |
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List of Variables: |
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Variables |
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f35805 Location: |
Variable Format: character Notes: UNF:6:3+Q6Ib3u3lG6869GTceGVg== |
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f35805 Location: |
Variable Format: character Notes: UNF:6:dV8TOzXe3zMo3YIxodAFwQ== |
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f35795 Location: |
Summary Statistics: Mean 550.0; Max. 800.0; StDev 144.55405563317828; Valid 1001.0; Min. 300.0; Variable Format: numeric Notes: UNF:6:0Q/P3or4CGduzpsYbUYzVw== |
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f35795 Location: |
Summary Statistics: Max. 2.626; Min. 0.121; Mean 0.8517982017982019; Valid 1001.0; StDev 0.7698174012301643 Variable Format: numeric Notes: UNF:6:pv0tdR2rwefKpV0GQgr94Q== |
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