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Part 1: Document Description
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Citation |
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Title: |
Replication Data for: Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden-Popper Perovskites for Non-Volatile Memories |
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Identification Number: |
doi:10.21979/N9/5DXP9O |
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Distributor: |
DR-NTU (Data) |
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Date of Distribution: |
2020-03-25 |
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Version: |
1 |
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Bibliographic Citation: |
Ankur, Solanki; Antonio Guerrero; Zhang Qiannan; Juan Bisquert; Sum, Tze Chien, 2020, "Replication Data for: Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden-Popper Perovskites for Non-Volatile Memories", https://doi.org/10.21979/N9/5DXP9O, DR-NTU (Data), V1 |
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Citation |
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Title: |
Replication Data for: Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden-Popper Perovskites for Non-Volatile Memories |
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Identification Number: |
doi:10.21979/N9/5DXP9O |
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Authoring Entity: |
Ankur, Solanki (Nanyang Technological University) |
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Antonio Guerrero (Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló, Spain) |
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Zhang Qiannan (Nanyang Technological University) |
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Juan Bisquert (Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló, Spain) |
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Sum, Tze Chien (Nanyang Technological University) |
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Software used in Production: |
Origin |
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Grant Number: |
start-up Grant M4080514 |
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Grant Number: |
JSPS-NTU Joint Research Project M4082176 |
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Grant Number: |
AcRF Tier 1 Grant RG173/16 |
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Grant Number: |
Tier 2 Grants MOE2015-T2-2-015 |
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Grant Number: |
MOE2016-T2-1-034 |
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Grant Number: |
MOE2017-T2-1-110 |
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Grant Number: |
NRF Investigatorship Programme NRF-NRFI-2018-04 |
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Grant Number: |
Project MAT2016-76892-C3-1-R. A.G. |
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Grant Number: |
RYC-201416809 |
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Grant Number: |
UJI-B2017-32 |
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Distributor: |
DR-NTU (Data) |
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Access Authority: |
Ankur, Solanki |
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Access Authority: |
Sum Tze Chien |
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Depositor: |
Ankur, Solanki |
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Date of Deposit: |
2020-03-25 |
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Holdings Information: |
https://doi.org/10.21979/N9/5DXP9O |
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Study Scope |
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Keywords: |
Engineering, Physics, Engineering, Physics, Perovskite, Memory, Ressitive Switching, Impedance Spectroscopy |
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Abstract: |
Ion migration, one origin of current–voltage hysteresis, is the bane of halide perovskite optoelectronics. Herein, we leverage this unwelcome trait to unlock new opportunities for resistive switching using layered Ruddlesdsen–Popper perovskites (RPPs) and explicate the underlying mechanisms. The ON/OFF ratio of RPP-based devices is strongly dependent on the layers and peaks at n̅ = 5, demonstrating the highest ON/OFF ratio of ∼104 and minimal operation voltage in 1.0 mm2 devices. Long data retention even in 60% relative humidity and stable write/erase capabilities exemplify their potential for memory applications. Impedance spectroscopy reveals a chemical reaction between migrating ions and the external contacts to modify the charge transfer barrier at the interface to control the resistive states. Our findings explore a new family of facile materials and the necessity of ionic population, migration, and their reactivity with external contacts in devices for switching and memory applications. |
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Kind of Data: |
Experimental current-voltage, capacitance, surface potential |
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Methodology and Processing |
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Sources Statement |
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Data Access |
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Other Study Description Materials |
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Related Publications |
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Citation |
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Identification Number: |
10.1021/acs.jpclett.9b03181 |
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Bibliographic Citation: |
Solanki, A., Guerrero, A., Zhang, Q., Bisquert, J., & Sum, T. C. (2019). Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden-Popper Perovskites for Non-Volatile Memories. The Journal of Physical Chemistry Letters,11, 2, 463-470. |
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Citation |
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Identification Number: |
10356/138045 |
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Bibliographic Citation: |
Solanki, A., Guerrero, A., Zhang, Q., Bisquert, J., & Sum, T. C. (2019). Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden-Popper Perovskites for Non-Volatile Memories. The Journal of Physical Chemistry Letters,11, 2, 463-470. |
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